MEMS device, MEMS device module and acoustic transducer

ABSTRACT

A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of PCT International ApplicationPCT/JP2009/001811 filed on Apr. 21, 2009, which claims priority toJapanese Patent Application No. 2008-164788 filed on Jun. 24, 2008. Thedisclosures of these applications including the specifications, thedrawings, and the claims are hereby incorporated by reference in theirentirety.

BACKGROUND

The present disclosure relates to MEMS devices, such as acoustictransducers and the like, which include a semiconductor substrate as asupport substrate, and a movable electrode and a fixed electrode abovethe semiconductor substrate, and MEMS device modules including the MEMSdevices.

MEMS (Micro-Electro-Mechanical Systems) devices to which semiconductortechnologies are applied are a promising technology for reducing thesize of and improving the performance of conventional electroniccomponents. Significant achievements have already been made in the massproduction of MEMS devices in the fields of microphones, accelerationsensors and the like, as disclosed in Japanese Patent Laid-OpenPublication No. 2007-295516 and the like. In the mass production ofthese MEMS devices, a semiconductor substrate is employed as a supportsubstrate so that a manufacturing line and a wafer process forfabricating a semiconductor integrated circuit can be utilized.

SUMMARY

However, the aforementioned MEMS devices, particularly capacitivedevices such as acoustic transducers, are very likely to suffer fromnoise, variations in sensitivity, and the like.

In view of the foregoing, it is an object of the present disclosure toprovide an MEMS device which is less likely to suffer from noise,variations in sensitivity, and the like.

In order to achieve the object, the present inventors have studied thecause of noise, variations in sensitivity, and the like being verylikely to occur in MEMS devices, to find the following.

Specifically, when an MEMS device having an electrode structure isprovided on a semiconductor substrate, a MIS (Metal InsulatorSemiconductor) structure is readily formed to act as a parasiticcapacitor. The present inventors have found that a potential varies dueto displacement current caused by variations in the width of a depletionlayer in the MIS structure, and as a result, noise, variations insensitivity and the like occur in capacitive devices, such as acoustictransducers.

Specifically, the polarity of interface charge present at an interfaceof the semiconductor substrate in the MIS structure is the same as thepolarity of majority carriers in the semiconductor substrate, adepletion layer is formed in the semiconductor substrate. The depletionlayer acts as a portion of parasitic capacitance, and variations in themagnitude of the parasitic capacitance due to the formation of thedepletion layer cause noise, which leads to problems, such as areduction in S/N ratio characteristics and variations in sensitivity.

For example, in the presence of a light source which emits light at apredetermined frequency, such as a fluorescent lamp, a non-equilibriumstate occurs in the MIS structure due to carrier generation andannihilation, so that the width of the depletion layer undergoesmodulation, and therefore, the magnitude of the parasitic capacitancevaries periodically. In capacitive devices such as acoustic transducers,the variation of the magnitude of the parasitic capacitance causesnoise, leading to a reduction in S/N ratio characteristics.

Likewise, in the case of transfer between places having differentilluminances or different temperatures, a non-equilibrium state occursin the MIS structure due to carrier generation and annihilation, so thatthe width of the depletion layer undergoes modulation, and therefore,the magnitude of the parasitic capacitance varies. As a result, noiseoccurs. In particular, when an inexpensive and widely used p-typesilicon substrate is employed as the support substrate of a capacitivedevice such as an acoustic transducer, positive charge caused by a smallamount of aluminum or the like attached to a surface of the substrateduring a substrate cleaning step or the like causes the positive chargeforming a depletion layer, and therefore, the device is very likely tosuffer from an influence of variations in the width of the depletionlayer due to changes in temperature or light intensity.

The present disclosure has been made based on the aforementionedfindings. Specifically, a MEMS device according to the presentdisclosure, includes a semiconductor substrate, a first insulating filmformed on the semiconductor substrate, a vibrating film formed on thefirst insulating film and having a first electrode, a fixed film formedabove the vibrating film with an air gap being interposed between thevibrating film and the fixed film, and having a second electrode, and asecond insulating film provided between the semiconductor substrate anda portion of the fixed film. The semiconductor substrate has a regioncontaining N-type majority carriers.

In the MEMS device of the present disclosure, the semiconductorsubstrate may be a silicon substrate.

In the MEMS device of the present disclosure, the semiconductorsubstrate and the first insulating film may be removed from apredetermined region, and the vibrating film may be formed, covering thepredetermined region.

In the MEMS device of the present disclosure, the semiconductorsubstrate may contact the first insulating film. The region containingN-type majority carrier may be provided in at least a portion of thesemiconductor substrate where the semiconductor substrate contacts thefirst insulating film. In this case, a concentration of N-type majoritycarriers in the portion of the semiconductor substrate where thesemiconductor substrate contacts the first insulating film, ispreferably higher than a concentration of N-type majority carriers inthe other portion of the semiconductor substrate.

In the MEMS device of the present disclosure, the region containingN-type majority carriers may contain an N-type impurity. Specifically, aconcentration of the N-type impurity is preferably 1×10¹⁴ cm⁻³ or moreand 1×10²¹ cm⁻³ or less. In this case, the N-type impurity may be aphosphorus atom or an arsenic atom.

In the MEMS device of the present disclosure, the semiconductorsubstrate may be an N-type semiconductor substrate.

In the MEMS device of the present disclosure, the first insulating filmmay be a silicon oxide film.

In the MEMS device of the present disclosure, the second insulating filmmay be a silicon oxide film.

In the MEMS device of the present disclosure, a height of the air gapmay be substantially equal to a separation between the vibrating filmand the fixed film.

Also, a MEMS device module according to the present disclosure includesthe MEMS device of the present disclosure, and a cover provided abovethe MEMS device and having an acoustic hole.

The MEMS device module of the present disclosure may further include anamplifier electrically coupled to the MEMS device.

Also, an acoustic transducer according to the present disclosureincludes a semiconductor substrate, a movable electrode formed above thesemiconductor substrate, a fixed electrode formed above thesemiconductor substrate, a first insulating film provided between thesemiconductor substrate and a portion of the movable electrode, and asecond insulating film provided between the semiconductor substrate anda portion of the fixed electrode. The semiconductor substrate, the firstinsulating film and the movable electrode constitute the first MISstructure. The semiconductor substrate, the second insulating film andthe fixed electrode constitute the second MIS structure. Interfacecharge having the first polarity is present at an interface between thesemiconductor substrate and at least one of the first insulating filmand the second insulating film. The semiconductor substrate has majoritycarriers having the second polarity.

In the acoustic transducer of the present disclosure, the semiconductorsubstrate may be a silicon substrate having a region containing N-typemajority carriers. In this case, the silicon substrate may contact thefirst insulating film. The region containing N-type majority carriersmay be provided in at least a portion of the silicon substrate in whichthe silicon substrate contacts the first insulating film. Specifically,a concentration of N-type majority carriers in the portion of thesemiconductor substrate where the semiconductor substrate contacts thefirst insulating film, may be higher than a concentration of N-typemajority carriers in the other portion of the semiconductor substrate.Also, in this case, the silicon substrate may be an N-type siliconsubstrate.

In the acoustic transducer of the present disclosure, the movableelectrode and the fixed electrode may constitute a condenser structure.A capacitance of the condenser structure may vary due to vibration ofthe movable electrode which is caused in response to sound pressure.

According to the present disclosure, in MEMS devices such as acoustictransducers and the like, a region containing N-type majority carriersis provided in a semiconductor substrate as a support substrate, wherebyit is possible to substantially prevent a depletion layer from beingformed in a parasitic MIS structure due to fixed positive charge causedby aluminum contamination or the like occurring during a typicalintegrated circuit fabrication process. As a result, it is possible tosubstantially prevent noise, variations in sensitivity and the like fromoccurring due to variations in capacitance.

As described above, the present disclosure relates to MEMS devices, suchas acoustic transducers and the like. A region containing N-typemajority carriers is provided in a semiconductor substrate as a supportsubstrate, whereby it is advantageously possible to substantiallyprevent, for example, the occurrence of noise due to variations inparasitic capacitance. Therefore, high-performance and high-quality MEMSdevices which are fabricated using a silicon wafer or the like can bewidely supplied to the market.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of an acoustic transducer according toan embodiment of the present disclosure.

FIG. 2 is a cross-sectional view of the acoustic transducer of theembodiment of the present disclosure, schematically showing a capacitorat each part thereof.

FIG. 3 is a diagram showing an equivalent circuit of the acoustictransducer of the embodiment of the present disclosure of FIG. 2.

FIG. 4 is a diagram schematically showing a capacitor having an air gapcapacitance Ca in the acoustic transducer of the embodiment of thepresent disclosure.

FIG. 5 is a diagram schematically showing a capacitor having a parasiticcapacitance C₃ in the acoustic transducer of the embodiment of thepresent disclosure.

FIG. 6 is a diagram schematically showing a capacitor having a parasiticcapacitance C₁ in the acoustic transducer of the embodiment of thepresent disclosure.

FIG. 7 is a diagram schematically showing a capacitor having a parasiticcapacitance C₂ in the acoustic transducer of the embodiment of thepresent disclosure.

FIG. 8 is a diagram schematically showing a capacitor having a parasiticcapacitance C₁ in an acoustic transducer according to a comparativeexample (acoustic transducer having a depletion layer).

FIG. 9 is a diagram schematically showing a capacitor having a parasiticcapacitance C₂ in the acoustic transducer of the comparative example(acoustic transducer having a depletion layer).

FIG. 10 is a diagram for describing a change in a parasitic capacitanceCp due to an external stimulus (e.g., light), where the parasiticcapacitance Cp is of a capacitor in the acoustic transducer of thecomparative example (acoustic transducer having a depletion layer).

FIG. 11 is a diagram for describing both a relationship between anexternal stimulus (e.g., light) and the density of carriers and arelationship between the external stimulus and the width of a depletionlayer, in the acoustic transducer of the comparative example (acoustictransducer having a depletion layer).

FIG. 12A is a top view of a microphone module including the acoustictransducer of the embodiment of the present disclosure.

FIG. 12B is a cross-sectional view of the microphone module includingthe acoustic transducer of the embodiment of the present disclosure.

FIG. 12C is a circuit diagram of the microphone module including theacoustic transducer of the embodiment of the present disclosure.

DETAILED DESCRIPTION Embodiment

An acoustic transducer according to an embodiment of the presentdisclosure will be described hereinafter with reference to theaccompanying drawings.

FIG. 1 is a cross-sectional view showing the acoustic transducer of thisembodiment.

As shown in FIG. 1, a silicon oxide film 6 is formed on an N-typesilicon substrate 5 which is a support substrate. A multilayer structureof the silicon substrate 5 and the silicon oxide film 6 is removed toform a membrane region (substrate removed region) 7, leaving a portionthereof surrounding the membrane region 7. Specifically, the membraneregion 7 is a region which is formed by selectively removing the siliconsubstrate 5 (leaving a portion of the silicon substrate 5 surroundingthe membrane region 7) so that a vibrating film 2 described below can bevibrated by external pressure. The vibrating film 2 is formed on thesilicon oxide film 6, covering the membrane region 7. A leak hole 9which penetrates to the cavity of the membrane region 7 is formed in thevibrating film 2. The vibrating film 2 may be constituted of aconductive film, a lower electrode (vibrating electrode), or amultilayer film including the conductive film and an insulating film. Inparticular, when the vibrating film 2 includes an electret film, whichholds permanent charge, the vibrating film 2 can form a portion of anelectret condenser. In this embodiment, the vibrating film 2 includes alower electrode 3 made of a conductive film such as a polysilicon filmor the like, an insulating film 2B made of a silicon oxide film or thelike formed above the lower electrode 3, and insulating films 2A and 2Cmade of a silicon nitride film or the like which cover a lower surfaceand an upper surface (including side surfaces) of the insulating film2B, respectively. Also, a lead wire 8 made of the conductive filmincluded in the lower electrode 3 is formed on the silicon oxide film 6.

Also, a fixed film 10 is provided above the vibrating film 2. The fixedfilm 10 may be constituted of a conductive film, an upper electrode(fixed electrode), or a multilayer film which includes the conductivefilm and an insulating film. In particular, when the fixed film 10includes an electret film, which holds permanent charge, the fixed film10 can form a portion of an electret condenser. In this embodiment, thefixed film 10 includes an upper electrode 4 made of a conductive filmsuch as a polysilicon film or the like, and insulating films 10A and 10Bmade of a silicon nitride film or the like which cover a lower surfaceand an upper surface (including side surfaces) of the upper electrode 4,respectively.

Also, a silicon oxide film 12 for supporting the fixed film 10 is formedabove a portion of the vibrating film 2 and the silicon oxide film 6.

Also, an air gap 11 is provided and surrounded by the vibrating film 2,the fixed film 10 and the silicon oxide film 12. Note that the air gap11 is formed, extending over an entire upper surface of the membraneregion 7. In this embodiment, the air gap 11 is formed by removing aportion of the silicon oxide film 12. Also, the air gap 11 has a height(air gap length) which is equal to a separation between the vibratingfilm 2 and the fixed film 10.

Also, a plurality of acoustic holes 1 which penetrate to the air gap 11are formed in the fixed film 10 on the air gap 11. The acoustic holes 1serve as holes through which air which vibrates the vibrating film 2passes.

Also, an opening 13 is formed in the silicon oxide film 12, exposing thelead wire 8 on the silicon oxide film 6. Although not shown, the lowerelectrode 3 is connected via the lead wire 8 to an external circuit.

Next, operation of the acoustic transducer of this embodiment will bedescribed. In the acoustic transducer of this embodiment, when soundpressure is applied from above (outside) to the vibrating film 2 via theacoustic holes 1, the vibrating film 2 vertically vibrates in responseto the sound pressure. Here, a parallel-plate condenser structure whoseelectrodes are the lower electrode 3 and the upper electrode 4 isformed. Therefore, when the vibrating film 2 vertically vibrates, aseparation between the lower electrode 3 and the upper electrode 4changes, and therefore, the capacitance (Ca) of the condenser changes.On the other hand, if it is assumed that the capacitance (Ca) changes(the amount of a change in the capacitance Ca is hereinafter referred toas ΔCa) under the condition that the amount of charge (Qa) accumulatedin the condenser is constant, a voltage (Va) between the lower electrode3 and the upper electrode 4 changes as indicated by expression (2)described below in accordance with a relationship indicated byexpression (1) described below (the amount of a change in the voltage Vais hereinafter referred to as ΔVa).Qa=Ca×Va  (1)ΔVa=Qa/ΔCa  (2)

In other words, the vibration of air is converted into mechanicalvibration, whereby a change in sound pressure is converted into a changein voltage. This is the operating principle of the acoustic transducerof this embodiment. However, in conventional acoustic transducers,various parasitic capacitances vary, and therefore, the aforementionedideal voltage change cannot be obtained as an output.

Next, sensitivity which indicates a characteristic of acoustictransducers will be described. A general expression of the sensitivity Sof an acoustic transducer in the audible range is represented by:S=α×Ca×Va×P×(1/S ₀)  (3)where α represents a proportionality factor, Ca represents an air gapcapacitance (proportional to (air gap area/air gap length)) which is avariable portion, Va represents a voltage across the air gap, Prepresents sound pressure, and S₀ represents a stiffness (difficulty inmovement) of the vibrating film. As can also be seen from expression(3), Ca is one of the main parameters on which the level of thesensitivity depends. However, in conventional acoustic transducers,various parasitic capacitances vary, and therefore, an ideal sensitivitycharacteristic cannot be achieved.

Advantages of the acoustic transducer of this embodiment overconventional acoustic transducers will be described hereinafter in termsof a capacitor (including parasitic capacitance) of each part of theacoustic transducer.

Initially, the capacitor at each part of the acoustic transducer of thisembodiment will be described in detail.

FIG. 2 is a cross-sectional view of the acoustic transducer of thisembodiment, schematically showing the capacitor at each part thereof. InFIG. 2, reference symbol 14 indicates a capacitor having an air gapcapacitance Ca, reference symbol 15 indicates a parasitic capacitor(capacitance value C₁) of a MIS structure including the upper electrode4, the silicon oxide film 12, the silicon oxide film 6 and the siliconsubstrate 5, reference symbol 16 indicates a parasitic capacitor(capacitance value C₂) of a MOS structure including the lower electrode3, the silicon oxide film 6 and the silicon substrate 5, and referencesymbol 17 indicates a parasitic capacitor (capacitance value C₃) of aMOS structure including the upper electrode 4, the silicon oxide film 12and the lower electrode 3.

FIG. 3 is a diagram showing an equivalent circuit of the acoustictransducer of this embodiment of FIG. 2. The circuit of FIG. 3 includesthe capacitor 14 (air gap capacitance Ca), the capacitor 15 (parasiticcapacitance C₁), the capacitor 16 (parasitic capacitance C₂), thecapacitor 17 (parasitic capacitance C₃), the lower electrode 3 (voltageVmic), the upper electrode 4 (ground voltage), and the silicon (Si)substrate 5. Here, the voltage Vmic of the lower electrode 3 is outputas an electrical signal to the following circuit, such as an amplifieror the like. Also, although a rear surface of the silicon substrate 5 isattached directly to a printed substrate 22 having a ground potential(see FIG. 12B), the value of contact resistance between the siliconsubstrate 5 and the printed substrate 22 is large for a small voltagechange, and therefore, it is not necessary to take the voltage of thesilicon substrate 5 into consideration. Therefore, in the circuit ofFIG. 3, the capacitor 14, the capacitor 17, and the series capacitanceof the capacitors 15 and 16 are connected in parallel between the upperelectrode 4 and the lower electrode 3. Therefore, a total capacitanceCmic between the upper electrode 4 and the lower electrode 3 (thecapacitance of a virtual single capacitor 18) can be represented by:Cmic=Ca+C ₃+{(C ₁ ×C ₂)/(C ₁ +C ₂)}  (4)

As shown in expression (4), when the air gap capacitance Ca varies dueto vibration of the vibrating film 2, Cmic also varies due to thevariation of the air gap capacitance Ca, and therefore, the voltage Vmicof the lower electrode 3 also varies. In other words, a variation in theair gap capacitance Ca is converted into a variation in the voltage ofthe lower electrode 3, which is in turn input as a signal component tothe following circuit. On the other hand, also when the parasiticcapacitances C₁, C₂ and C₃ vary, Cmic also varies, and therefore, thevoltage Vmic of the lower electrode 3 also varies. Here, C₁, C₂ and C₃do not vary due to sound pressure and vary due to other factors, becauseof the respective capacitor structures. Therefore, a variation in Cmicdue to the variation of C₁, C₂ and C₃ is input as a noise component ofthe voltage Vmic of the lower electrode 3 to the following circuit. Inother words, although it is originally desirable to extract an outputsignal of the acoustic transducer which is proportional to a variationin the air gap capacitance Ca, from the lower electrode 3, this originalpurpose cannot be attained if the parasitic capacitances C₁, C₂ and C₃vary significantly.

Incidentally, the parasitic capacitances C₁ and C₂ are capacitancevalues of MIS capacitances formed between the silicon substrate 5 andthe upper electrode 4 and between the silicon substrate 5 and the lowerelectrode 3, respectively. The magnitudes of these capacitance valuesvary depending on a change in temperature or external light. Also, inthe equivalent circuit of FIG. 3, the parasitic capacitances C₁ and C₂are capacitances of the capacitors (15 and 16) coupled in series betweenthe lower electrode 3 and the upper electrode 4. Therefore, if the totalcapacitance value of a series combination of C₁ and C₂ varies, the totalcapacitance Cmic varies, and therefore, a noise component occurs in thevoltage Vmic of the lower electrode 3.

In contrast to this, according to this embodiment, by employing as thesupport substrate the n-type silicon substrate 5 in which electrons aremajority carriers, it is possible to substantially prevent the formationof a depletion layer which is caused by positive charge at an interfacebetween the silicon oxide film 6 and the silicon substrate 5 in the MISstructure having the parasitic capacitances C₁ and C₂. Therefore, thewidth of the depletion layer does not vary due to a change in theintensity of incident light or temperature, whereby the occurrence ofnoise, variations in sensitivity due to a change in temperature, and thelike can be substantially prevented.

FIG. 4 is a diagram schematically showing a capacitor (capacitor 14)having the air gap capacitance Ca in the acoustic transducer of thisembodiment. As shown in FIG. 4, the air gap capacitance Ca is created bythe air gap 11 and the insulating films 2A, 2B, 2C and 10A beinginterposed by the upper electrode 4 and the lower electrode 3, which arecapacitance electrodes. Therefore, the following expression isestablished.1/Ca=1/Cair+1/Ci  (5)

In expression (5), Cair is the value of capacitance created by the airgap 11, and Ci is the value of capacitance created by the insulatingfilms 2A, 2B, 2C and 10A.

FIG. 5 is a diagram schematically showing a capacitor (capacitor 17)having the parasitic capacitance C₃ in the acoustic transducer of thisembodiment. As shown in FIG. 5, the parasitic capacitance C₃ is createdby the insulating films 2A, 2C and 10A and the silicon oxide film 12being interposed between the upper electrode 4 and the lower electrode3, which are capacitance electrodes. Therefore, the following expressionis established.1/C ₃=1/Ci  (6)

In expression (6), Ci is the value of the capacitance created by theinsulating films 2A, 2C and 10A and the silicon oxide film 12.

FIG. 6 is a diagram schematically showing a capacitor (capacitor 15)having the parasitic capacitance C₁ in the acoustic transducer of thisembodiment. As shown in FIG. 6, the parasitic capacitance C₁ is createdby the insulating film 10A and the silicon oxide films 6 and 12 beinginterposed between the upper electrode 4 and the N-type siliconsubstrate 5 (electrons are majority carriers), which are capacitanceelectrodes. Therefore, the following expression is established.1/C ₁=1/Ci  (7)

In expression (7), Ci is the value of the capacitance created by theinsulating film 10A and the silicon oxide films 6 and 12.

According to the acoustic transducer of this embodiment, as shown inFIG. 6, while interface charge 24 having positive charge is formed inthe silicon oxide film 6 in the vicinity of an interface between thesilicon oxide film 6 and the silicon substrate 5, N-type majoritycarriers 27 are accumulated in the silicon substrate 5 and electricallybalance the interface charge 24, whereby a depletion layer is notformed. As a result, it is possible to substantially prevent thevariation of the parasitic capacitance C₁ due to factors other thansound pressure, and therefore, it is advantageously possible tosubstantially prevent a noise component from being included in avariation in the voltage of the lower electrode 3 caused by thevibration of the vibrating film 2.

FIG. 7 is a diagram schematically showing a capacitor (capacitor 16)having the parasitic capacitance C₂ in the acoustic transducer of thisembodiment. As shown in FIG. 7, the parasitic capacitance C₂ is createdby the silicon oxide film 6 being interposed between the lower electrode3 and the N-type silicon substrate 5 (electrons are majority carriers),which are capacitance electrodes. Therefore, the following expression isestablished.1/C ₂=1/Ci  (8)

In expression (8), Ci is the value of the capacitance created by thesilicon oxide film 6.

According to the acoustic transducer of this embodiment, as shown inFIG. 7, while interface charge 24 having positive charge is formed inthe silicon oxide film 6 in the vicinity of an interface between thesilicon oxide film 6 and the silicon substrate 5, N-type majoritycarriers 27 are accumulated in the silicon substrate 5 and electricallybalance the interface charge 24, whereby a depletion layer is notformed. Specifically, according to the acoustic transducer of thisembodiment, the silicon substrate 5 is of the N type and the majoritycarriers are electrons. Therefore, as compared to when a P-type siliconsubstrate is employed as the support substrate, majority carriers 27having negative charge are easily collected in the vicinity of theinterface between the silicon oxide film 6 and the silicon substrate 5,corresponding to the interface charge 24 having positive charge formedin the silicon oxide film 6, and therefore, a depletion layer is notformed in the silicon substrate 5 in the vicinity of the interfacebetween the silicon oxide film 6 and the silicon substrate 5. Therefore,an electrical balance between the interface charge 24 and the majoritycarriers 27 is maintained, and therefore, the carrier equilibrium stateis maintained even in the case of transfer between places havingdifferent illuminances or different temperatures. As a result, it ispossible to substantially prevent the variation of the parasiticcapacitance C₂ due to factors other than sound pressure, and therefore,it is advantageously possible to substantially prevent a noise componentfrom being included in a variation in the voltage of the lower electrode3 caused by the vibration of the vibrating film 2.

The parasitic capacitances C₁ and C₂ where the silicon substrate 5 ofthe acoustic transducer of this embodiment is replaced with a P-typesilicon substrate 5A will be described hereinafter as a comparativeexample.

FIG. 8 is a diagram schematically showing a capacitor (capacitor 15)having the parasitic capacitance C₁ in the acoustic transducer (acoustictransducer having a depletion layer) of the comparative example. Asshown in FIG. 8, the parasitic capacitance C₁ is created by theinsulating film 10A and the silicon oxide films 6 and 12 beinginterposed between the upper electrode 4 and the P-type siliconsubstrate 5A (holes are majority carriers), which are capacitanceelectrodes. Also, as shown in FIG. 8, while interface charge 24 havingpositive charge is formed in the silicon oxide film 6 in the vicinity ofan interface between the silicon oxide film 6 and the P-type siliconsubstrate 5A, a depletion layer 26 is formed in the P-type siliconsubstrate 5A due to an influence of the interface charge 24. Here,acceptor atoms 25 having negative charge are present in the depletionlayer 26, and an electrical balance is maintained between the acceptoratoms 25 and the interface charge 24. Therefore, the followingexpression is established.1/C ₁=1/Ci+1/Csi  (9)

In expression (9), Csi is the value of capacitance created by thedepletion layer 26, and Ci is the value of capacitance created by theinsulating films 10A and the silicon oxide films 6 and 12.

FIG. 9 is a diagram schematically showing a capacitor (capacitor 16)having the parasitic capacitance C₂ in the acoustic transducer (acoustictransducer having a depletion layer) of the comparative example. Asshown in FIG. 9, the parasitic capacitance C₂ is created by the siliconoxide film 6 being interposed between the lower electrode 3 and theP-type silicon substrate 5A (holes are majority carriers), which arecapacitance electrodes. Also, as shown in FIG. 9, while interface charge24 having positive charge is formed in the silicon oxide film 6 in thevicinity of an interface between the silicon oxide film 6 and the P-typesilicon substrate 5A, a depletion layer 26 is formed in the P-typesilicon substrate 5A due to an influence of the interface charge 24.Here, acceptor atoms 25 having negative charge are present in thedepletion layer 26, and an electrical balance is maintained between theacceptor atoms 25 and the interface charge 24. Therefore, the followingexpression is established.1/C ₂=1/Ci+1/Csi  (10)

In expression (10), Csi is the value of capacitance created by thedepletion layer 26, and Ci is the value of capacitance created by thesilicon oxide film 6.

Next, an influence of an external stimulus, such as light, heat or thelike, on a behavior or a characteristic of the parasitic capacitor ofthe acoustic transducer (acoustic transducer having a depletion layer)of the comparative example of FIGS. 8 and 9, will be described. FIG. 10is a diagram for describing a change in a parasitic capacitance Cp dueto an external stimulus (e.g., light), where the parasitic capacitanceCp is of a capacitor in the acoustic transducer having a depletion layerof the comparative example. Here, the capacitor having the parasiticcapacitance Cp has basically the same structure as that of the capacitorhaving the parasitic capacitance C₂ of FIG. 9. Also, FIG. 11 is adiagram for describing both a relationship between an external stimulus(e.g., light) and the density of carriers and a relationship between theexternal stimulus and the width of a depletion layer, in the acoustictransducer having a depletion layer of the comparative example.

As shown in FIG. 10, the parasitic capacitance Cp is created by asilicon oxide film 6A being interposed between an electrode 3A and aP-type silicon substrate 5A (holes are majority carriers), which arecapacitance electrodes. Also, as shown in FIG. 10, while interfacecharge 24 having positive charge is formed in the silicon oxide film 6Ain the vicinity of an interface between the silicon oxide film 6A andthe P-type silicon substrate 5A, a depletion layer 26 is formed in theP-type silicon substrate 5A due to an influence of the interface charge24. Here, acceptor atoms 25 having negative charge are present in thedepletion layer 26, and an electrical balance is maintained between theacceptor atoms 25 and the interface charge 24. Therefore, the followingexpression is established.1/Cp=1/Ci+1/Csi  (11)

In expression (11), Csi is the value of capacitance created by thedepletion layer 26, and Ci is the value of capacitance created by thesilicon oxide film 6A.

Also, Csi can be represented by:Csi=(∈si×∈0/Xp)×S  (12)where ∈si is the relative dielectric constant of silicon, ∈0 is thedielectric constant of vacuum, Xp is the width of the depletion layer,and S is the area of the depletion layer.

As can be seen from expression (11), the depletion layer capacitance Csiacts as a portion of the parasitic capacitance Cp. In the presence of alight source which emits light at a predetermined frequency, such as afluorescent lamp, a non-equilibrium state occurs in the MIS structuredue to carrier generation and annihilation accompanying ON/OFF of thelight source, so that the width of the depletion layer undergoesmodulation as shown in FIG. 11, and therefore, the magnitude of theparasitic capacitance varies periodically. Therefore, in capacitivedevices such as acoustic transducers, the variation of the magnitude ofthe parasitic capacitance causes noise, leading to a reduction in S/Nratio characteristics.

Likewise, in the case of transfer between places having differentilluminances or different temperatures, a non-equilibrium state occursin the MIS structure due to carrier generation and annihilation, so thatthe width of the depletion layer undergoes modulation, and therefore,the magnitude of the parasitic capacitance varies, resulting inoccurrence of noise.

For example, a capacitance Cmic of the acoustic transducer of thecomparative example including a parasitic capacitor having a depletionlayer is represented by:Cmic=Ca+Cp  (13)where Ca is an air gap capacitance, and Cp is the value of capacitanceof the parasitic capacitor having the depletion layer.

In an environment in which sound pressure is applied to the acoustictransducer of the comparative example, and at the same time, thedepletion layer width Xp undergoes modulation due to a stimulus such aslight, heat or the like, Cmic can be represented by:Cmic=Ca+ΔCa+Cp+ΔCp  (14)where ΔCa is a signal component which is generated in response to thesound pressure, and ΔCp is a noise component which is caused by anexternal stimulus such as light, heat or the like.

In contrast to this, in this embodiment, the N-type silicon substrate 5is employed as the support substrate of the MEMS device to provide theparasitic capacitor structure of FIGS. 6 and 7, whereby the noisecomponent represented by ΔCp in expression (14) can be eliminated.

Specifically, according to expressions (4) and (14), Cmic in thepresence of an external stimulus such as light, heat or the like inaddition to sound pressure in the acoustic transducer of this embodimentcan be represented by:Cmic=Ca+ΔCa+C ₃ +ΔC ₃+{((C ₁ +ΔC ₁)×(C ₂ +ΔC ₂))/((C ₁ +ΔC ₁)+(C ₂ +ΔC₂))}  (15)

Here, as in this embodiment, the variation of the capacitance caused byan external stimulus such as light, heat or the like can besubstantially prevented by arranging the parasitic capacitors C₁ and C₂in a manner shown in FIGS. 6 and 7. In this case, Cmic can berepresented by:

$\begin{matrix}\begin{matrix}{{Cmic} = {{Ca} + {\Delta\;{Ca}} + C_{3} + \left\{ \left( {\left( {C_{1} \times C_{2}} \right)/\left( {C_{1} + C_{2}} \right)} \right\} \right.}} \\{= {{Ca} + {\Delta\;{Ca}} + {Cp}}}\end{matrix} & (16)\end{matrix}$

In other words, as can be seen in expression (16), the noise componentdue to the external stimulus can be eliminated.

Although the N-type silicon substrate 5 is employed as the supportsubstrate in the acoustic transducer of this embodiment, a P-typesilicon substrate (an intrinsic semiconductor may be employed: the sameholds true in the description which follows) may be employed instead ofthe N-type silicon substrate 5, and an N-type impurity-containing regionmay be provided in the P-type silicon substrate at or in the vicinity ofan interface between the P-type silicon substrate and the silicon oxidefilm 6. In this case, an advantage similar to that of this embodimentcan be obtained. Thus, by providing the N-type impurity-containingregion, a region containing N-type majority carriers can be formed. Inthis case, the concentration of N-type majority carriers in a portion ofthe P-type silicon substrate which contacts the silicon oxide film 6, ispreferably higher than the concentration of N-type majority carriers inthe other portion of the P-type silicon substrate. As a result, adepletion layer is not formed in the vicinity of the interface betweenthe P-type silicon substrate and the silicon oxide film 6. Therefore, itis possible to substantially prevent the variation of the depletionlayer capacitance due to an external stimulus such as light, heat or thelike, whereby a noise component caused by an external stimulus can bereliably eliminated. Here, in order to ensure the advantage of thepresent disclosure, the N-type impurity concentration of the N-typeimpurity-containing region is preferably 1×10¹⁴ cm⁻³ or more and 1×10²¹cm⁻³ or less. Also, examples of the N-type impurity contained in theN-type impurity-containing region include a phosphorus atom, an arsenicatom, and the like.

Also, in the acoustic transducer of this embodiment, the concentrationof the N-type impurity in a portion of the N-type silicon substrate 5employed as the support substrate where the N-type silicon substrate 5contacts the silicon oxide film 6, may be higher than that in the otherportion. As a result, the aforementioned advantage of this embodimentcan be obtained to a further extent. Specifically, it is possible tosubstantially prevent a depletion layer from being formed in the siliconsubstrate 5 in the vicinity of an interface between the siliconsubstrate 5 and the silicon oxide film 6, and therefore, it is possibleto substantially prevent the capacitance of the depletion layer fromvarying due to an external stimulus such as light, heat or the like. Asa result, a noise component caused by an external stimulus can bereliably eliminated. Here, in order to reliably achieve the advantage ofthe present disclosure, the N-type impurity concentration of thehigh-concentration N-type impurity region provided in the N-type siliconsubstrate 5 is preferably 1×10¹⁴ cm⁻³ or more and 1×10²¹ cm⁻³ or less.Examples of the N-type impurity additionally introduced into thehigh-concentration N-type impurity region include a phosphorus atom, anarsenic atom and the like.

Incidentally, it is considered that, in a microphone module having anacoustic transducer, if a through hole (acoustic hole) is provided in acover covering the acoustic transducer, a variation in the capacitanceof the depletion layer due to light is significantly increased. This isbecause the acoustic transducer is directly irradiated with lightthrough the through hole formed in the cover. Therefore, in such a case,the acoustic transducer of this embodiment is particularly advantageous.

A specific configuration of a microphone module including the acoustictransducer of this embodiment will be described hereinafter withreference to the drawings.

FIGS. 12A to 12C are diagrams for describing the microphone moduleincluding the acoustic transducer of this embodiment. FIG. 12A is a topview. FIG. 12B is a cross-sectional view. FIG. 12C is a circuit diagram.Note that, in FIG. 12C, the same parts as those of the equivalentcircuit of the acoustic transducer of this embodiment of FIG. 2 areindicated by the same reference symbols and will not be described.

As shown in FIGS. 12A and 12B, in the microphone module of thisembodiment, an acoustic transducer 19 of this embodiment and anamplifier 20 are provided on a printed substrate 22, and a cover 23 isprovided, covering the acoustic transducer 19 and the amplifier 20. Athrough hole (acoustic hole) 21 is provided in the cover 23 above theacoustic transducer 19 (specifically, the fixed film 10 (see FIG. 1)).Specifically, if the through hole 21 is provided immediately above theacoustic transducer 19, sound pressure can be transmitted to theacoustic transducer 19 without attenuation in the microphone module, andtherefore, the microphone module can have a higher level of sensitivity.Moreover, a depletion layer is not formed in the silicon substrate 5(see FIG. 1) which is the support substrate of the acoustic transducer19 of this embodiment. Therefore, it is possible to substantiallyprevent the occurrence of noise, variations in sensitivity and the likedue to a light source which emits light at a predetermined frequency,such as a fluorescent lamp, transfer between places having differentilluminances, transfer between places having different temperatures, orthe like.

In the circuit of FIG. 12C, when the voltage signal Vmic generated atthe lower electrode 3 is input to the amplifier 20, the signal isamplified and the resultant signal is output as an electrical signalVmod of the microphone module. Also in this case, a depletion layer isnot formed in the silicon substrate 5 of the acoustic transducer 19 ofthis embodiment, and therefore, a noise component is not included in thevoltage signal Vmic generated at the lower electrode 3. As a result,even if the voltage signal Vmic is amplified, the S/N ratio of themicrophone module is advantageously not reduced.

Although the capacitive acoustic transducer has been described assubject matter in this embodiment, the present disclosure is not limitedto this embodiment. Various changes and applications can be made withoutdeparting the spirit and scope of the present disclosure. Specifically,an advantage similar to that of this embodiment can also be achievedwhen the present disclosure is applied to other MEMS devices, such as apressure sensor and the like, which have the same basic structure asthat of the acoustic transducer of this embodiment. Note that, in thepresent disclosure, a technology of fabricating a device, such as acapacitive acoustic transducer, a pressure sensor or the like, bydividing a substrate (wafer) on which a large number of chips arefabricated by utilizing, for example, a manufacturing process technologyfor CMOS (complementary metal-oxide semiconductor) or the like, isreferred to as a MEMS technology. A device which is fabricated by such aMEMS technology is referred to as a MEMS device. Also, needless to say,the present disclosure can be applied to various devices other than MEMSdevices, such as a capacitive acoustic transducer, a pressure sensor andthe like, without departing from the spirit and scope of the presentdisclosure.

1. A MEMS device comprising: a semiconductor substrate; a firstinsulating film formed between the semiconductor substrate and a firstelectrode; a vibrating film formed on the first insulating film andhaving the first electrode; a fixed film formed above the vibrating filmwith an air gap being interposed between the vibrating film and thefixed film, the fixed film having a second electrode; and a secondinsulating film provided between the semiconductor substrate and aportion of the fixed film, the second insulating film having an openingthat exposes a part of the first electrode, wherein: the semiconductorsubstrate has a region containing N-type majority carriers, thesemiconductor substrate contacts the first insulating film, the regioncontaining N-type majority carriers is provided in at least a portion ofthe semiconductor substrate where the semiconductor substrate contactsthe first insulating film, a concentration of N-type majority carriersin the portion of the semiconductor substrate where the semiconductorsubstrate contacts the first insulating film is higher than aconcentration of N-type majority carriers in other portions of thesemiconductor substrate, and the portion of the semiconductor substratewhich is in contact with the first insulating film is located in aregion directly under the opening.
 2. The MEMS device of claim 1,wherein the semiconductor substrate is a silicon substrate.
 3. The MEMSdevice of claim 1, wherein the semiconductor substrate and the firstinsulating film are removed from a predetermined region, and thevibrating film is formed, covering the predetermined region.
 4. The MEMSdevice of claim 1, wherein the region containing N-type majoritycarriers contains an N-type impurity.
 5. The MEMS device of claim 4,wherein a concentration of the N-type impurity is 1×10¹⁴ cm⁻³ or moreand 1×10²¹ cm⁻³ or less.
 6. The MEMS device of claim 4, wherein theN-type impurity is a phosphorus atom or an arsenic atom.
 7. The MEMSdevice of claim 1, wherein the semiconductor substrate is an N-typesemiconductor substrate.
 8. The MEMS device of claim 1, wherein thefirst insulating film is a silicon oxide film.
 9. The MEMS device ofclaim 1, wherein the second insulating film is a silicon oxide film. 10.The MEMS device of claim 1, wherein a height of the air gap issubstantially equal to a separation between the vibrating film and thefixed film.
 11. A MEMS device module comprising: the MEMS device ofclaim 1; and a cover provided above the MEMS device and having anacoustic hole.
 12. The MEMS device module of claim 11, wherein theacoustic hole is provided immediately above the MEMS device.
 13. TheMEMS device module of claim 11, further comprising: an amplifierelectrically coupled to the MEMS device.